Home > Transistor IC Chip >

MOSFET NPN Transistor IC Chip SOT-23 SOT-23-3 LP2301BLT1G

Product Categories

Electronic IC Chips [656]
IC Memory Chip [18]
Transistor IC Chip [28]
Amplifier IC Chips [18]
Microcontroller Integrated Circuit [16]
Power Management ICs [21]
PCBA Circuit Board [13]
Integrated Circuit Module [10]
Other Electronic Components [29]
Capacitors Resistors [25]
Semiconductor Diode [10]

Shenzhen Res Electronics Limited

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

MOSFET NPN Transistor IC Chip SOT-23 SOT-23-3 LP2301BLT1G

Name: MOSFET NPN Transistor IC Chip SOT23 SOT233 LP2301BLT1G
Brand: original
Price: 1 USD

Buy cheap MOSFET NPN Transistor IC Chip SOT-23 SOT-23-3 LP2301BLT1G product

Brand Name : original

Model Number : LP2301BLT1G

MOQ : discussible

Price : discussible

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 10000 pcs per month

Delivery Time : 1-7work days

Packaging Details : original

Drain-source resistance : 0.1 Ω

Polarity : P

Threshold voltage : 0.4 V

Package : SOT-23-3

Minimum package : 3000

RoHS Standard : RoHS Compliant

lead standard : Lead Free

Contact Now

Original New MOSFET NPN Transistor PNP SOT-23(SOT-23-3) LP2301BLT1G

Products Description:

1.MOS (Field Effect Transistor)/LP2301BLT1G Diodes and Rectifiers

2.the material of product compliance withRoHS requirements and Halogen Free

3.S- prefix for automotive and other applications requiringunique site and control change requirements; AEC-Q101qualified and PPAP capable

4.RDS(ON),VGS@-2.5V,IDS@-2.0A=150mΩ

5.RDS(ON),VGS@-4.5V,IDS@-2.8A=110mΩ

6.Power management in note book Portable equipment Battery powered system Load switch DSC

MAXIMUM RATINGS(Ta = 25ºC)

Parameter	Symbol	Limits	Unit
Drain–Source Voltage	VDSS	-20	V
Gate–to–Source Voltage – Continuous	VGS	±8	V
Drain Current(Note 1) – Continuous TA = 25°C – Pulsed	ID IDM	-2 -10	A

THERMAL CHARACTERISTICS

Parameter	Symbol	Limits	Unit
Maximum Power Dissipation	PD	0.7	W
Thermal Resistance, junction–to–Ambient(Note 1)	RΘJA	175	C/W
Junction and Storage temperature	TJ, Tstg	−55∼+150	C

Technological Parameters:

Drain-source resistance	0.1 Ω
Polarity	P
Threshold voltage	0.4 V
Drain-source voltage (Vds)	20 V
Continuous drain current (Ids)	2.8A
Package	SOT-23-3
Minimum package	3000
RoHS Standard	RoHS Compliant
lead standard	Lead Free
pin number	6

Product Tags:

MOSFET NPN Transistor IC Chip

Transistor IC Chip SOT-23

LP2301BLT1G

MOSFET NPN Transistor IC Chip SOT-23 SOT-23-3 LP2301BLT1G Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Shenzhen Res Electronics Limited
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!